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MRF8S7235NR3 1 rf device data freescale semiconductor, inc. rf power field effect transistor n--channel enhancement--mode lateral mosfet designed for base station applications with frequencies from 728 to 768 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1400 ma, p out = 63 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency (mhz) g ps (db) d (%) output par (db) acpr (dbc) 728 20.0 36.1 6.3 --38.1 748 20.2 36.0 6.4 --39.0 768 20.1 35.9 6.4 --38.7 ? capable of handling 10:1 vswr, @ 32 vdc, 748 mhz, 360 watts cw output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? typical p out @ 1 db compression point ? 260 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? 225 c capable plastic package ? in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristich symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 63 w cw, 28 vdc, i dq = 1400 ma, 728 mhz case temperature 82 c, 250 w cw, 28 vdc, i dq = 1400 ma, 728 mhz r jc 0.33 0.29 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8s7235n rev. 0, 6/2012 freescale semiconductor technical data 728--768 mhz, 63 w avg., 28 v single w--cdma lateral n--channel rf power mosfet MRF8S7235NR3 o m -- 7 8 0 -- 2 plastic ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MRF8S7235NR3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 920 adc) v gs(th) 1.5 2.3 3.0 vdc gate quiescent voltage (v dd =28vdc,i d = 1400 madc, measured in functional test) v gs(q) 2.3 3.0 3.8 vdc drain--source on--voltage (v gs =10vdc,i d =3.4adc) v ds(on) 0.1 0.18 0.3 vdc functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out = 63 w avg., f = 728 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 18.8 20.0 21.8 db drain efficiency d 34.5 36.1 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.8 6.3 ? db adjacent channel power ratio acpr ? --38.1 --35.5 dbc input return loss irl ? -- 1 6 -- 1 0 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out =63wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 728 mhz 20.0 36.1 6.3 --38.1 -- 1 6 748 mhz 20.2 36.0 6.4 --39.0 -- 1 7 768 mhz 20.1 35.9 6.4 --38.7 -- 1 5 1. part internally matched both on input and output. (continued)
MRF8S7235NR3 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, 728--768 mhz bandwidth p out @ 1 db compression point, cw p1db ? 260 ? w imd symmetry @ 107 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 10 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 40 ? mhz gain flatness in 40 mhz bandwidth @ p out =63wavg. g f ? 0.3 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.0124 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.005 ? db/ c
4 rf device data freescale semiconductor, inc. MRF8S7235NR3 figure 1. MRF8S7235NR3 test circuit component layout *c4, c5, c11, c12, c13, c17, c27, c28, c29 and c30 are mounted vertically. mrf8s7235n rev. 4a cut out area r1 c1 b1 c6 c9 c10 r2 c11* c15 c18 c17* c16 c12* c13* c14 c20 c4* c5* c30* c29* c28* c27* c8 c22 c24 c26 c23 c25 c21 c7 c2 c3 c19 c31 table 6. MRF8S7235NR3 test circuit c omponent designations and values part description part number manufacturer b1 ferrite bead mpz2012s300a murata c1, c2, c3, c4, c5 22 f chip capacitors c5750kf1h226zt tdk c6, c7, c8 3.3 f chip capacitors c3225jb1h335mt tdk c9, c19, c20 68 pf chip capacitors atc100b680jt500xt atc c10 12 pf chip capacitor atc100b120jt500xt atc c11, c12 10 pf chip capacitors atc100b100ct500xt atc c13 2.7 pf chip capacitor atc100b2r7ct500xt atc c14 110 pf chip capacitor atc100b111jt500xt atc c15, c16, c17, c18, c27 3.6 pf chip capacitors atc100b3r6ct500xt atc c21, c22 15 pf chip capacitors atc100b150jt500xt atc c23, c24 6.2 pf chip capacitors atc100b6r2ct500xt atc c25, c26 8.2 pf chip capacitors atc100b8r2ct500xt atc c28 3.3 pf chip capacitor atc100b3r3ct500xt atc c29 1.0 pf chip capacitor atc100b1r0bt500xt atc c30 39 pf chip capacitor atc100b390jt500xt atc c31 470 f electrolytic capacitor mcgpr63v477m13x26-rh multicomp r1 27 k ? , 1/4 w chip resistor crcw120627k0jnea vishay r2 4.75 ? , 1/4 w chip resistor crcw12064r75fnea vishay pcb 0.030 , r =3.5 rf35--a2 taconic
MRF8S7235NR3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 710 irl g ps acpr f, frequency (mhz) figure 2. output peak--to--average ratio compression (parc) broadband performance @ p out = 63 watts avg. -- 1 8 -- 1 0 -- 1 2 -- 1 4 -- 1 6 14 24 23 22 -- 4 0 38 37 36 35 -- 3 5 -- 3 6 -- 3 7 -- 3 8 d , drain efficiency (%) d g ps , power gain (db) 21 20 19 18 17 16 15 720 730 740 750 760 770 780 790 34 -- 3 9 -- 2 0 parc parc (db) -- 1 . 5 -- 1 . 1 -- 1 . 2 -- 1 . 3 -- 1 . 4 -- 1 . 6 acpr (dbc) v dd =28vdc,p out =63w(avg.),i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth figure 3. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 100 w (pep), i dq = 1400 ma two--tone measurements (f1 + f2)/2 = center frequency of 748 mhz figure 4. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 50 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 30 70 90 130 10 70 60 50 40 30 20 d , drain efficiency (%) -- 1 d b = 5 9 w 110 v dd =28vdc,i dq = 1400 ma, f = 748 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf d acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 22 g ps , power gain (db) 21 20 19 18 17 16 g ps -- 2 d b = 8 0 w --3db=110w input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf
6 rf device data freescale semiconductor, inc. MRF8S7235NR3 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 5. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 17 23 10 70 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 22 21 10 100 300 -- 6 0 acpr (dbc) 20 19 18 0 -- 3 0 -- 4 0 -- 5 0 figure 6. broadband frequency response 12 24 650 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1400 ma 20 18 16 675 gain (db) 22 gain 700 725 750 775 800 825 850 irl -- 2 0 10 5 0 -- 5 -- 1 0 irl (db) 14 --15 728 mhz v dd =28vdc,i dq = 1400 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probabilit y on ccdf 768 mhz 748 mhz 728 mhz 768 mhz 748 mhz 768 mhz 60 w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 7. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 8. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
MRF8S7235NR3 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dq = 1400 ma, p out =63wavg. f mhz z source ? z load ? 710 0.95 - j0.82 1.19 - j1.03 720 0.93 - j0.81 1.05 - j0.99 730 0.89 - j0.77 0.92 - j0.91 740 0.87 - j0.73 0.85 - j0.82 750 0.89 - j0.73 0.83 - j0.78 760 0.92 - j0.77 0.83 - j0.77 770 0.89 - j0.81 0.79 - j0.76 780 0.80 - j0.77 0.71- j0.68 790 0.70 - j0.66 0.61 - j0.56 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. series equivalent source and load impedance input matching network device under test output matching network z source z load
8 rf device data freescale semiconductor, inc. MRF8S7235NR3 v dd =28vdc,i dq = 1200 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 728 1.00 - j0.80 0.50 - j0.70 55.3 339 54.1 56.2 417 57.2 748 0.70 - j1.10 0.50 - j0.60 55.4 347 53.9 56.2 417 56.9 768 0.80 - j1.25 0.50 - j0.60 55.3 339 53.5 56.1 407 56.9 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 10. load pull performance ? maximum p1db tuning input load pull tuner device under test output load pull tuner z source z load v dd =28vdc,i dq = 1200 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max drain efficiency p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 728 1.00 - j0.80 1.40 + j0.20 52.4 174 67.4 53.1 204 70.0 748 0.70 - j1.10 1.20 + j0.10 52.6 182 67.0 53.5 224 69.9 768 0.80 - j1.25 1.10 + j0.20 52.6 182 67.1 53.3 214 69.9 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 11. load pull performance ? maximum drain efficiency tuning input load pull tuner device under test output load pull tuner z source z load
MRF8S7235NR3 9 rf device data freescale semiconductor, inc. package dimensions
10 rf device data freescale semiconductor, inc. MRF8S7235NR3
MRF8S7235NR3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. MRF8S7235NR3 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 june 2012 ? initial release of data sheet
MRF8S7235NR3 13 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: mrf8s7235n rev. 0, 6/2012

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